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| LED - Chip Preliminary Radiation Infrared Type DDH 24.04.2007 Technology AlGaAs/AlGaAs ELC-910-17 rev. 05/07 Electrodes P (anode) up typ. dimensions (m) 360 120 typ. thickness 150 (25) m anode gold alloy, 1.5 m cathode gold alloy, 0.5 m dotted, 25% covered LED-05 Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Parameter Forward voltage Reverse voltage Radiant power1 Radiant power2 Peak wavelength Spectral bandwidth at 50% Switching time 1 2 Test conditions IF = 20 mA IR = 100 A IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA Symbol VF VR e e p 0.5 tr, tf Min Typ 1.3 Max 1.5 Unit V V 5 2.3 3.5 7.0 900 910 70 400 915 mW mW nm nm ns Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment Labeling Type EL-910-17 Lot N e(typ) [mW] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
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